Title :
A simplified hydrodynamic impact ionization model based on the average energy of hot electron subpopulation
Author :
Ting-Wei Tang ; Joonwoo Nam
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
A simplified hydrodynamic model for impact ionization (II) is developed. The model is based on the average energy of hot electron subpopulation (HES) which is believed to be more relevant to the II than the average energy of total electron population (TEP). By solving this simplified HD model, II coefficient is calculated only as a function of the average energy of HES. The model is easily applicable to 2-D by exploiting the current flow line approach.
Keywords :
hot carriers; impact ionisation; semiconductor device models; average energy; current flow line approach; hot electron subpopulation; hydrodynamic impact ionization model; impact ionization coefficient; model parameter extraction; Boltzmann equation; Boundary conditions; Computational modeling; Electronic mail; Electrons; High definition video; Hydrodynamics; Impact ionization; MOSFET circuits; Power engineering and energy;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621389
