Title :
The influence of hydrogen and nitrogen on the floating zone growth of ultra-pure silicon crystals
Author :
Becker, P. ; Bettin, H. ; Kuetgens, U. ; Basile, G. ; Riemann, H. ; von Ammon, W. ; Goerigk, G.
Author_Institution :
Phys. Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
The aim of this paper is to give new informations about our experience concerning the influence of hydrogen on the qualities of dislocation-free FZ silicon and an explanation of the silicon molar volume inconsistency.
Keywords :
density; elemental semiconductors; hydrogen; nitrogen; semiconductor growth; silicon; zone melting; Si:H,N; floating zone growth; hydrogen effect; molar volume; nitrogen effect; ultra-pure silicon crystal; Argon; Crystals; Density measurement; Doping; Hydrogen; Lattices; Metrology; Nitrogen; Silicon; Volume measurement;
Conference_Titel :
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location :
Ottawa, Ontario, Canada
Print_ISBN :
0-7803-7242-5
DOI :
10.1109/CPEM.2002.1034972
