DocumentCode
2285397
Title
The influence of hydrogen and nitrogen on the floating zone growth of ultra-pure silicon crystals
Author
Becker, P. ; Bettin, H. ; Kuetgens, U. ; Basile, G. ; Riemann, H. ; von Ammon, W. ; Goerigk, G.
Author_Institution
Phys. Tech. Bundesanstalt, Braunschweig, Germany
fYear
2002
fDate
16-21 June 2002
Firstpage
564
Lastpage
565
Abstract
The aim of this paper is to give new informations about our experience concerning the influence of hydrogen on the qualities of dislocation-free FZ silicon and an explanation of the silicon molar volume inconsistency.
Keywords
density; elemental semiconductors; hydrogen; nitrogen; semiconductor growth; silicon; zone melting; Si:H,N; floating zone growth; hydrogen effect; molar volume; nitrogen effect; ultra-pure silicon crystal; Argon; Crystals; Density measurement; Doping; Hydrogen; Lattices; Metrology; Nitrogen; Silicon; Volume measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location
Ottawa, Ontario, Canada
Print_ISBN
0-7803-7242-5
Type
conf
DOI
10.1109/CPEM.2002.1034972
Filename
1034972
Link To Document