Reduction of negative differential conductivity effect of AlGaN/GaN HEMTs using gate scaling

Author

Kundu, Sudip ; Das, Palash ; Pathak, Sant ; Mukhopadhyay, Parthak ; Reddy, Jasvardhan ; Chang, Edward Y. ; Biswas, Dhrubes

Author_Institution

Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol. Kharagpur, Kharagpur, India

fYear

2010

fDate

17-20 Aug. 2010

Firstpage

794

Lastpage

797

Abstract

Gate characteristic is one of the most important parts for the HEMTs. In this paper the DC and RF performance improvement using gate length scaling has been presented. The results show that reduction of the gate length from 1 μm to 0.15 μm, the current gain cutoff frequency increases from 12 GHz to 56 GHz and power gain cutoff frequency increases from 20.5 GHz to 63 GHz respectively. In this paper we report the first ever simulation based device structure design for reduction of Negative Differential Conductivity (NDC) effect in AlGaN/GaN HEMTs by gate length scaling.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; wide band gap semiconductors; AlGaN-GaN; DC performance improvement; HEMT; RF performance improvement; gate scaling; negative differential conductivity effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Conference_Location

Seoul

ISSN

1944-9399

Print_ISBN

978-1-4244-7033-4

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2010.5697824

Filename

5697824