Title :
Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma
Author :
Ryabchikov, A.I. ; Sivin, D.O. ; Bumagina, A.I.
Author_Institution :
National research Tomsk Polytechnic University, Tomsk Russia
Abstract :
It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
Keywords :
arcs (electric); coating techniques; electrostatics; plasma materials processing; plasma sheaths; plasma-wall interactions; sputtering; surface treatment; electrostatic repulsion; ion sputtering; macroparticle repulsion; negative potential substrate surface; negative repetitive substrate pulsed biasing; negatively charged macroparticles; plasma immersed substrate; plasma sheath; plasma-substrate voltage drop; surface macropaticle content; time 2 min; tungsten grid; vacuum arc macroparticle behavior mechanism; vacuum arc macroparticle behavior regularity; Electric fields; Electric potential; Plasmas; Sputtering; Substrates; Surface treatment; Vacuum arcs; high-frequency short-pulse negative bias potencial; macroparticle; surface density; vacuum-arc plasma;
Conference_Titel :
Strategic Technology (IFOST), 2012 7th International Forum on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4673-1772-6
DOI :
10.1109/IFOST.2012.6357762