DocumentCode
2286005
Title
A boundary conforming mesh generation algorithm for simulation of devices with complex geometry
Author
Moroz, V. ; Motzny, S. ; Lilja, K.
Author_Institution
Technol. Modeling Assoc., Sunnyvale, CA, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
293
Lastpage
295
Abstract
An automatic boundary conforming mesh generation algorithm is proposed for device simulation. The algorithm provides meshes with extremely anisotropic elements stretched along the boundaries and gridlines orthogonal to the boundaries and p/n junctions. The meshes created are especially efficient for simulation of MOSFETs with curved channel surfaces.
Keywords
MOSFET; mesh generation; semiconductor device models; FEM; MOSFET; anisotropic elements; boundary conforming mesh generation algorithm; complex geometry devices; curved channel surfaces; device simulation; Anisotropic magnetoresistance; Conformal mapping; Finite element methods; Geometry; Level set; MOSFETs; Mesh generation; Robustness; Solid modeling; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621395
Filename
621395
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