• DocumentCode
    2286167
  • Title

    Temporal Performance Degradation under NBTI: Estimation and Design for Improved Reliability of Nanoscale Circuits

  • Author

    Paul, Bipul C. ; Kang, Kunhyuk ; Kufluoglu, Haldun ; Alam, Muhammad Ashraful ; Roy, Kaushik

  • Author_Institution
    Toshiba America Res. Inc., San Jose, CA
  • Volume
    1
  • fYear
    2006
  • fDate
    6-10 March 2006
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Negative bias temperature instability (NBTI) has become one of the major causes for temporal reliability degradation of nanoscale circuits. In this paper, we analyze the temporal delay degradation of logic circuits due to NBTI. We show that knowing the threshold voltage degradation of a single transistor due to NBTI, one can predict the performance degradation of a circuit with a reasonable degree of accuracy. We also propose a sizing algorithm taking NBTI-affected performance degradation into account to ensure the reliability of nanoscale circuits for a given period of time. Experimental results on several benchmark circuits show that with an average of 8.7% increase in area one can ensure reliable performance of circuits for 10 years
  • Keywords
    integrated circuit reliability; logic circuits; logic design; nanoelectronics; 10 years; logic circuits; nanoscale circuit reliability; negative bias temperature instability; temporal performance degradation; temporal reliability degradation; threshold voltage; Analytical models; Degradation; Delay estimation; Digital circuits; MOSFETs; Niobium compounds; Performance analysis; Reliability engineering; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation and Test in Europe, 2006. DATE '06. Proceedings
  • Conference_Location
    Munich
  • Print_ISBN
    3-9810801-1-4
  • Type

    conf

  • DOI
    10.1109/DATE.2006.244119
  • Filename
    1656995