Performance analysis of Carbon Nanotube Field Effect Transistor with high K dielectric

Carbon Nanotube Field Effect Transistor is preferred over Metal Oxide Semiconductor Field Effect Transistor since it is free from short channel effects. Top-gate carbon nanotube field-effect transistor has better performance rate than the back-gate carbon nanotube field-effect transistor [5]. In this work, to further increase the performance rate of the device, the oxide layer in between the gate electrode and the periphery of carbon nanotube[11], is replaced with a high-K dielectric material. COMSOL Multiphysics and nanoHub are used as simulators. The device performance was analysed with the parameters like On current, potential across channel, electron density, transmission coefficient, etc.