Title :
Comparison of three different architectures for MOS-compatible quadratic synapses
Author :
Fakhraie, S. Mehdi ; Smith, K.C. ; Xu, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
Inspired by the harmony between the basic functional elements of biological neural networks and their natural operating media, we have been seeking for ways to implement artificial neural networks (ANNs) using the intrinsic functionality of the most commonly available devices in an electronics technology, in contrast to the method of hardware-compilation of software-simulation modules. In the case of MOS technology, we employ a quadratic functional equation similar to that found in standard MOS transistors to implement synapses in ANNs. A structure has been proposed in to implement a MOS device with externally-controllable threshold voltage to be employed as a synapse. In the present work, we develop and compare practical architectures within which these synapses can be utilized optimally. A simulator and proper training algorithms have been developed to simulate different hardware-based architectures
Keywords :
ART neural nets; CMOS integrated circuits; functional analysis; functional equations; neural net architecture; ANNs; CMOS ICs; MOS technology; MOS-compatible quadratic synapses; artificial neural networks; basic functional elements; biological neural networks; electronics technology; externally-controllable threshold voltage; hardware-based architectures; intrinsic functionality; natural operating media; proper training algorithms; quadratic functional equation; standard MOS transistors; synapses; Artificial neural networks; CMOS technology; Computer architecture; Equations; Hardware; MOS devices; MOSFETs; Parallel processing; Threshold voltage; Voltage control;
Conference_Titel :
Speech, Image Processing and Neural Networks, 1994. Proceedings, ISSIPNN '94., 1994 International Symposium on
Print_ISBN :
0-7803-1865-X
DOI :
10.1109/SIPNN.1994.344786