3–5 GHz CMOS Power Amplifier design for ultra-wide-band application

This paper presents the design of a wideband class AB cascode Power Amplifier (PA) using UMC 0.18μm CMOS process for UWB applications covering lower band of 3-5 GHz. Designed class AB PA delivers an output power of 1.80267 dBm at an input 1-dB compression point of -11.144 dBm for a 4 GHz frequency. It achieves a good gain flatness of 13.3±1.0 dB over the entire 3-5 GHz. The matching networks are designed to achieve an input and output return loss of <;-7.5 and <;-7.0 dB respectively, with an excellent reverse isolation of <;-37 dB. Power Added Efficiency (PAE) is found to be 15.32% at -5 dBm input RF power. The designed PA also found to be un-conditionally stable.