DocumentCode :
228643
Title :
A low-power Flash quantizer using Inverter threshold reference and dual mode operation
Author :
Agarwal, Reetika K. ; Jaipalan, Nidhi
Author_Institution :
Dept. of Electr. & Electron. Eng., Birla Inst. of Technol. & Sci., Pilani, India
fYear :
2014
fDate :
13-14 Feb. 2014
Firstpage :
1
Lastpage :
5
Abstract :
In this work, a novel design paradigm for an ultra-low power and area efficient CMOS Flash ADC has been introduced. New techniques such as dual mode operation and use of sized threshold voltage are employed to reduce both static and dynamic power exponentially. Architectural improvements are adopted both at the macro and micro design level, such as the TIQ (Threshold Inverter Quantizer) structure and multiple selection method in order to make the physical circuit very compact. In contrast with the traditional Flash ADC architecture that uses 2n-1 comparator, an area inefficient resistive ladder and an encoder, this design makes use of only a series of inverters and multiplexers. Simulation and experimental results show that the proposed 3-bit Flash ADC consumes merely 127μW power at 20 MHz S/s and achieves an estimated 85% area savings. The ADC has been designed and simulated in standard TSMC 180nm CMOS technology with 1.8V supply using Cadence Virtuoso and Spectre simulation tool. This new Flash ADC offers a good choice for SOC applications with extreme power and area constraints and medium-to-low resolution.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); flash memories; ladder networks; logic gates; 2n-1 comparator; CMOS flash ADC; Cadence Virtuoso simulation tool; SOC applications; Spectre simulation tool; TIQ structure; TSMC CMOS technology; dual mode operation; dynamic power; encoder; inverter threshold reference; low-power flash quantizer; macro design level; micro design level; multiple selection method; power 127 muW; resistive ladder; size 180 nm; static power; storage capacity 3 bit; threshold inverter quantizer structure; ultra-low power; voltage 1.8 V; Bismuth; CMOS integrated circuits; CMOS technology; Inverters; Silicon compounds; Switches; System-on-chip; Flash ADC; Signal Processing; Sized threshold; Threshold Inverter Quantizer; multiple selection method; ultra-low power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Communication Systems (ICECS), 2014 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-2321-2
Type :
conf
DOI :
10.1109/ECS.2014.6892713
Filename :
6892713
Link To Document :
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