Determining base transit time of anAlyGa1−yAs HBT using the analytical model developed for SiGe device with exponentially doped base

Base transit time (BTT) of a graded base AlGaAs Heterojunction Bipolar Transistor (HBT)has been determined by using the analytical model previously developed for a SiGe HBT (arafatetal.). While thinking about the expansion of the SiGe BTT model for any other ternary compound semiconductor material like AlGaAs, the previous model could not be used directly because most of the parameters used in the model depend on the materials used. The novel part of the present work is that the authors investigated published literature for those parameters associated with AlGaAs and fed them into the SiGe model, determined the BTT and verified the results.