DocumentCode :
2286822
Title :
Characterization of excess electrical noise in Al-thin films
Author :
Massiha, G.H.
Author_Institution :
Dept. of Biol. & Agric. Eng., Georgia Univ., Athens, GA, USA
fYear :
1995
fDate :
26-29 Mar 1995
Firstpage :
99
Lastpage :
101
Abstract :
Excess electrical noise measurement was used to study the electromigration damage in thin aluminum thin films. Magnitude and frequency exponent for excess electrical noise spectra of 1/fα were measured as a function of the Al-thin film temperature. In this study very seldom excess noise with frequency exponent, α, exactly equal to 1.0 or 2.0 was encountered. The value of α constantly changed from 0.6 to 2.8. This scattering of the α-value meant that different percentages of various noises did exist in almost every noise spectrum. Computer analysis was used to find the portion of each type of noise present at various frequencies. This analyses showed that the excess noise magnitude is overwhelmingly larger than the thermal noise component when α⩾0.8. The excess noise spectra with α>1.2 should be considered 1/f2 excess noise and different models have to be considered for their study
Keywords :
aluminium; electromigration; integrated circuit metallisation; integrated circuit noise; metallic thin films; α-value scattering; Al; Al-thin films; IC; characterization; computer analysis; electromigration damage; excess electrical noise; frequency exponent; temperature; thermal noise component; Aluminum; Background noise; Conducting materials; Density measurement; Electromigration; Frequency; Integrated circuit noise; Noise figure; Noise measurement; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon '95. Visualize the Future., Proceedings., IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
0-7803-2642-3
Type :
conf
DOI :
10.1109/SECON.1995.513065
Filename :
513065
Link To Document :
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