• DocumentCode
    2286881
  • Title

    Nanowire zero-capacitor DRAM transistors with and without junctions

  • Author

    Lee, Chi-Woo ; Yan, Ran ; Ferain, Isabelle ; Kranti, Abhinav ; Akhvan, N.D. ; Razavi, Pedram ; Yu, Ran ; Colinge, J.P.

  • Author_Institution
    Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
  • fYear
    2010
  • fDate
    17-20 Aug. 2010
  • Firstpage
    242
  • Lastpage
    245
  • Abstract
    This paper shows the applicability of the JunctionsLess (JL) Multiple-Gate MOSFET (MuGFET) structure to capacitor-less one-transistor dynamic random access memory (1T-DRAM) applications and compares it with the more conventional inversion-mode (IM) MuGFET. The JL-MuGFET has advantages over the IM MuGFETs for 1T-DRAM in that it has a very low leakage current and a low avalanche breakdown voltage due to the lack of junctions in the structure.
  • Keywords
    DRAM chips; MOSFET; avalanche breakdown; leakage currents; nanowires; IT-DRAM; MuGFET; avalanche breakdown voltage; capacitor-less one-transistor dynamic random access memory; junctions-less multiple-gate MOSFET structure; leakage current; nanowire zero-capacitor DRAM transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
  • Conference_Location
    Seoul
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-7033-4
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2010.5697888
  • Filename
    5697888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2286881