DocumentCode
2286920
Title
Integrated statistical process and device simulation system with automatic calibration using single-step feedback and backpropagation neural network
Author
Chen, V.M.C. ; Yung-Tao Lin ; Yeng-Kaung Peng
Author_Institution
Submicron Dev. Center, Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
313
Lastpage
314
Abstract
An integrated simulation system that combines process and device simulation is developed in Submicron Development Center of AMD to address the following issues: 1. The manufacturing data are fundamentally statistical. It is difficult to measure exact values for each parameter in every process step, and single data point is simply insufficient to justify any decision. 2. A high order of data accuracy is required for fine-tuning an established fabrication process. 3. A high degree of flexibility and out-of-spec prediction ability is required for process development. 4. Fast ramp-up time for process control demands minimum engineering calibration effort. 5. Development engineers need full flexibility to modify process flow, process parameter, as well as underlying device physics models. These require a combination of statistical approach, device physics modeling and a series of data processing techniques.
Keywords
backpropagation; calibration; integrated circuit manufacture; neural nets; semiconductor process modelling; statistical process control; AMD; automatic calibration; backpropagation neural network; data accuracy; data processing techniques; device physics modeling; device physics models; device simulation system; engineering calibration effort; manufacturing data; out-of-spec prediction ability; process control; process development; process flow; process parameter; ramp-up time; single-step feedback; statistical process simulation; Backpropagation; Calibration; Electric variables measurement; Fabrication; Manufacturing; Neural networks; Neurofeedback; Physics; Process control; Statistical distributions;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621400
Filename
621400
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