Title :
Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab
Author :
Marcon, Denis ; De Jaeger, B. ; Halder, Sebastian ; Vranckx, N. ; Mannaert, G. ; Van Hove, Marleen ; Decoutere, Stefaan
Author_Institution :
imec, Leuven, Belgium
Abstract :
In this paper, we report on the challenges related to growth and processing of 200 mm GaN-on-Si wafers in a CMOS fab. We describe the Au free process we developed as well as how we assure wafer quality prior processing. For the first time, we analyze possible Ga contamination issues related to the processing of GaN wafers and we present the cleaning procedures we developed to avoid it.
Keywords :
CMOS integrated circuits; III-V semiconductors; contamination; gallium compounds; high electron mobility transistors; semiconductor technology; silicon; wide band gap semiconductors; CMOS fab; Ga contamination issues; GaN-Si; HEMT; cleaning procedure; semiconductor device manufacture; size 200 mm; wafer quality prior processing; Contamination; Gallium nitride; power semiconductor devices; processing; semiconductor device manufacture;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2013.2255897
