Two-dimensional device simulator for cyclic bias application

A two-dimensional device simulator has been developed which searches for steady-states in cyclic bias applications. A conventional time domain device simulator calculates one period of the cyclic bias and the newly developed module finds a set of internal device parameters which gives the same values at the beginning and at the end of the unit cycle. The simulator is applied to the analysis of pulse pattern effect due to deep traps in GaAs heterojunction FETs on semi-insulating substrates.