Title :
Two-dimensional device simulator for cyclic bias application
Author :
Ohno, Y. ; Takahashi, Y.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
A two-dimensional device simulator has been developed which searches for steady-states in cyclic bias applications. A conventional time domain device simulator calculates one period of the cyclic bias and the newly developed module finds a set of internal device parameters which gives the same values at the beginning and at the end of the unit cycle. The simulator is applied to the analysis of pulse pattern effect due to deep traps in GaAs heterojunction FETs on semi-insulating substrates.
Keywords :
III-V semiconductors; deep levels; field effect transistors; gallium arsenide; semiconductor device models; time-domain analysis; GaAs; cyclic bias application; deep traps; heterojunction FETs; internal device parameters; pulse pattern effect; semi-insulating substrates; time domain device simulator; two-dimensional device simulator; Circuit simulation; FETs; Frequency measurement; Gallium arsenide; Impedance measurement; Noise measurement; Semiconductor devices; Steady-state; Substrates; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621401
