A numerical model for BJTs from liquid-nitrogen temperature to room temperature

Author

Tseng, Fan Jon ; Ho, Fat Duen

Author_Institution

Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA

fYear

1995

fDate

26-29 Mar 1995

Firstpage

261

Lastpage

264

Abstract

It has previously been reported that the Boltzmann statistics approximation as applied to MOSFETs at low-temperature yields a result very close to that of the approach following Fermi-Dirac statistics. However, by using the Boltzmann statistics approximation, results are obtained in less CPU-time than using Fermi-Dirac statistics. The present paper presents a simulation program for modeling the behavior of a bipolar junction transistor (BJT) operating under temperatures ranging from room temperature (300°K) down to liquid nitrogen temperature (77°K). Numerical methods for the simulation are outlined. The Boltzmann statistics approximation is applied in most of the cases. The simulation results of Boltzmann statistics are illustrated along with the case that assuming 100% ionization

Keywords

bipolar transistors; carrier density; carrier mobility; cryogenic electronics; energy gap; mesh generation; semiconductor device models; statistical analysis; 77 to 300 K; BJT; Boltzmann statistics approximation; bipolar junction transistor; carrier concentration; energy band gap; ionization; liquid-N₂ temperature; low-temperature; room temperature; Charge carrier processes; Computational modeling; Finite difference methods; Ionization; MOSFETs; Nitrogen; Numerical models; Poisson equations; Statistics; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '95. Visualize the Future., Proceedings., IEEE

Conference_Location

Raleigh, NC

Print_ISBN

0-7803-2642-3

Type

conf

DOI

10.1109/SECON.1995.513098

Filename

513098