Title :
Grid size independent model of inversion layer carrier mobility
Author :
Enda, T. ; Shigyo, N.
Author_Institution :
ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The universality of effective carrier mobility in MOSFET inversion layers has been reported. In order to realize the accurate device simulation of MOSFETs, a mobility model considering the universality is indispensable. A local field model (LFM) has been proposed. The LFM proposed was derived from the requirement that the calculated conductance of a whole inversion layer gave the measured value. However, the resulting conductance varies with the grid size strongly. The authors intend to solve this inconsistency, to examine this grid size dependency and propose a new grid size independent LFM.
Keywords :
MOSFET; carrier mobility; inversion layers; semiconductor device models; MOSFET; carrier mobility; device simulation; grid size independent model; inversion layer; local field model; Charge carrier density; Computational modeling; Equations; Grid computing; Laboratories; Mesh generation; Microelectronics; Performance analysis; Solid modeling; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621402
