DocumentCode :
2287390
Title :
Angular dependence of the exchange bias and the jump phenomenon
Author :
Bai, Yuhao ; Yun, Guohong ; Bai, Narsu
Author_Institution :
Coll. of Phys. Sci. & Technol., Inner Mongolia Univ., Hohhot, China
fYear :
2010
fDate :
17-20 Aug. 2010
Firstpage :
539
Lastpage :
543
Abstract :
Based on the principle of minimal energy, the angular dependence of exchange bias for ferromagnetic/antiferromagnetic bilayers has been investigated in detail. The competition between unidirectional and uniaxial anisotropies divides the initial magnetization state of the bilayer into monostable and bistable states, which determine the angular dependence of exchange bias directly. When the bilayer is in the bistable state, the exchange bias field and the coercivity will display a jump phenomenon at the orientation angles of the intrinsic hard axes. The jump phenomenon in the angular dependence of exchange bias has been explained by analyzing the magnetization reversal processes. The numerical calculations show that both the exchange bias field and the coercivity are larger in the magnitude at the points of the jumps. This jump phenomenon is an intrinsic property of the bilayers which is dependent on exchange coupling constant, the thickness and the uniaxial anisotropy constant of the ferromagnetic layer.
Keywords :
antiferromagnetic materials; coercive force; exchange interactions (electron); ferromagnetic materials; interface magnetism; magnetic anisotropy; magnetisation reversal; angular dependence; bistable state; coercivity; exchange bias field; exchange coupling constant; ferromagnetic layer; ferromagnetic-antiferromagnetic bilayers; initial magnetization state; intrinsic hard axes; intrinsic property; jump phenomenon; magnetization reversal processes; minimal energy principle; monostable state; numerical calculations; orientation angles; uniaxial anisotropy constant; unidirectional anisotropy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
ISSN :
1944-9399
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2010.5697917
Filename :
5697917
Link To Document :
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