Resonant tunneling with superlattice emitters

Author

Banoo, Kausar ; Daniels-Race, Theda

Author_Institution

Dept. of Electr. Eng., Duke Univ., Durham, NC, USA

fYear

1995

fDate

26-29 Mar 1995

Firstpage

265

Lastpage

268

Abstract

In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmetric double barrier resonant tunneling diodes (ADBRTDs). The experiment consisted of growing devices with five periods of GaAs/AlAs SLs prior to the ADBRT structure in the growth direction. The periods of SL used in our characterization were 50 Å/50 Å, 30 Å/30 Å and 15 Å/ 15 Å. Observations of the effect of the SL period on the first resonance level in forward bias and reverse bias were made. Phonon assisted tunneling was also observed

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; phonons; resonant tunnelling diodes; semiconductor superlattices; 15 angstrom; 30 angstrom; 50 angstrom; GaAs-AlAs; asymmetric double barrier resonant tunneling diodes; characterization; electron injectors; first resonance level; forward bias; growth direction; phonon assisted tunneling; resonant tunneling; reverse bias; superlattice emitters; Electrons; Gallium arsenide; Heterojunctions; Laser sintering; Neodymium; Phonons; Resonance; Resonant tunneling devices; Semiconductor diodes; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '95. Visualize the Future., Proceedings., IEEE

Conference_Location

Raleigh, NC

Print_ISBN

0-7803-2642-3

Type

conf

DOI

10.1109/SECON.1995.513099

Filename

513099