Title :
A novel RF vertical MOSFET for pulsed applications [UHF amplifier]
Author_Institution :
Fairchild Semicond., Discrete Power Technol., San Jose, CA, USA
Abstract :
This paper discusses the results of a high breakdown voltage vertical DMOS RF amplifier that employs power trench technology™ to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26 V and a 5% duty cycle.
Keywords :
UHF field effect transistors; UHF power amplifiers; power MOSFET; pulse amplifiers; 26 V; 80 W; 900 MHz; RF vertical MOSFET; UHF amplifier; VDMOS; high breakdown voltage DMOS; high pulse RF peak power; pulse duty cycle; pulsed applications; Base stations; Costs; Linearity; MOSFET circuits; Manufacturing; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7824-5
DOI :
10.1109/IMOC.2003.1244837
