Title :
Modeling nonparabolicity effects in silicon inversion layers
Author :
Troger, C. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
We present a method to include the nonparabolicity correction for the bulk dispersion relation in the self-consistent solution of Schrodinger and Poisson equation. A formalism has been derived which allows us to characterize each subband by its energy, an effective mass and a subband nonparabolicity coefficient. A one-dimensional Schrodinger-Poisson solver has been developed which is applicable to both MOS and heterostructures. The program is applied to silicon inversion layers, and the influence of nonparabolicity on the subband system is quantitatively analyzed. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum of the carriers.
Keywords :
Poisson distribution; Schrodinger equation; elemental semiconductors; inversion layers; silicon; silicon compounds; two-dimensional electron gas; Poisson equation; Schrodinger equation; Si-SiO/sub 2/; bulk dispersion relation; carrier in-plane momentum; effective mass; inversion layers; nonparabolicity effects; one-dimensional Schrodinger-Poisson solver; self-consistent solution; wave functions; Dispersion; Effective mass; Eigenvalues and eigenfunctions; Electrons; Hydrogen; Kinetic energy; Microelectronics; Schrodinger equation; Silicon; Wave functions;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621403
