Title :
Empirical all region current based PHEMT DC model
Author :
Gao, Jianjun ; Li, Xiuping ; Wang, Hong ; Boeck, Georg
Author_Institution :
Inst. for High-Frequency & Semicond. Syst. Technol., Berlin Univ. of Technol., Germany
Abstract :
This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.
Keywords :
equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; PHEMT DC model; Statz model; double heterostructure; empirical all region current based model; equivalent circuits; high current applications; low current applications; simulation; transconductance coefficient; Area measurement; Batteries; Circuit simulation; Gallium arsenide; Intrusion detection; MMICs; PHEMTs; Radiofrequency identification; Threshold voltage; Wireless LAN;
Conference_Titel :
Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7824-5
DOI :
10.1109/IMOC.2003.1244839
