DocumentCode :
2287642
Title :
The application of pressure contact IGBTs in pulse power
Author :
Wakeman, F. ; Findlay, W.
Author_Institution :
Westcode Semicond. Ltd., Chippenham, UK
fYear :
2000
fDate :
2000
Abstract :
The pressure contact IGBT is introduced as a suitable switch for pulse power applications. A comparison is made betwen the electromechanical characteristics of the pressure contact IGBT and a similarly rated substrate mounted device. Some significant differences, which may offer an advantage in some pulse power applications, are identified. Initial test results, under short pulse high di/dt conditions, are presented and some conclusions drawn as to the future expansion of these results to encompass additional pulse power operating conditions
Keywords :
insulated gate bipolar transistors; electromechanical characteristics; pressure contact IGBT; pulse power operating conditions; pulse power switch; short pulse high di/dt conditions; substrate mounted device;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Pulsed Power 2000 (Digest No. 2000/053), IEE Symposium
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:20000289
Filename :
859566
Link To Document :
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