Diffusion barrier properties of atomic layer deposited iridium thin films on the Cu/Ir/Si structure

Author

Lim, Yong Hwan ; Yoo, Hana ; Bum Ho Choi ; Lee, Hong Kee ; Ho-Nyun Lee ; Hong Kee Lee

Author_Institution

Nat. Center for Nanoprocess & Equipments, Korea Inst. of Ind. Technol., Gwangju, South Korea

fYear

2010

fDate

17-20 Aug. 2010

Firstpage

594

Lastpage

597

Abstract

We have investigated diffusion barrier properties of atomic layer deposited iridium (Ir) thin film as a function of thermal treatment temperature. Up to the temperature of 500°C, Ir thin film maintained its initial stage without penetration of Cu layer into Si through Ir layer. Thermal stability of Ir layer up to 500°C was supported by HR-TEM and XRD measurement results. On the other hand, Ir layer was thermally annealed at 600°C, Cu-silicide was formed and interdiffusion of Cu and Ir was observed.

Keywords

annealing; atomic layer deposition; chemical interdiffusion; copper; iridium; metallic thin films; silicon; thermal stability; Cu layer; Cu-Ir-Si; Cu-Ir-Si structure; Cu-silicide; HR-TEM measurement; Ir layer; XRD measurement; atomic layer deposited iridium thin films; diffusion barrier properties; initial stage; interdiffusion; temperature 500 degC; temperature 600 degC; thermal annealing; thermal stability; thermal treatment temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Conference_Location

Seoul

ISSN

1944-9399

Print_ISBN

978-1-4244-7033-4

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2010.5697930

Filename

5697930