Title :
Diffusion barrier properties of atomic layer deposited iridium thin films on the Cu/Ir/Si structure
Author :
Lim, Yong Hwan ; Yoo, Hana ; Bum Ho Choi ; Lee, Hong Kee ; Ho-Nyun Lee ; Hong Kee Lee
Author_Institution :
Nat. Center for Nanoprocess & Equipments, Korea Inst. of Ind. Technol., Gwangju, South Korea
Abstract :
We have investigated diffusion barrier properties of atomic layer deposited iridium (Ir) thin film as a function of thermal treatment temperature. Up to the temperature of 500°C, Ir thin film maintained its initial stage without penetration of Cu layer into Si through Ir layer. Thermal stability of Ir layer up to 500°C was supported by HR-TEM and XRD measurement results. On the other hand, Ir layer was thermally annealed at 600°C, Cu-silicide was formed and interdiffusion of Cu and Ir was observed.
Keywords :
annealing; atomic layer deposition; chemical interdiffusion; copper; iridium; metallic thin films; silicon; thermal stability; Cu layer; Cu-Ir-Si; Cu-Ir-Si structure; Cu-silicide; HR-TEM measurement; Ir layer; XRD measurement; atomic layer deposited iridium thin films; diffusion barrier properties; initial stage; interdiffusion; temperature 500 degC; temperature 600 degC; thermal annealing; thermal stability; thermal treatment temperature;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2010.5697930
