Design and simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for breakdown voltage improvement

Author

George, Abin ; Nirmal, D. ; Prajoon, P. ; Mathew, Aldona

Author_Institution

Dept. of Electron. & Commun. Eng., Karunya Univ., Coimbatore, India

fYear

2014

fDate

13-14 Feb. 2014

Firstpage

1

Lastpage

4

Abstract

ASchottky Source/Drain(SSD) technology was implemented for the off-state breakdown voltage improvement of GaN/AlGaN HEMTs and its various DC characteristics has been analyzed using SENTAURUS TCAD tools. The proposed GaN/AlGaN HEMT device with SSD technology provides an improvement in breakdown voltage of about 120V as compared to the conventional control GaN/AlGaN HEMTs. The improvement of the off state break down voltage, thus effectively suppresses the source carrier injection in the proposed device. The maximum drain current of the proposed device is found to be680mA/mm at a threshold voltage of a -1.5V. The OFF current of the device is obtained as 1.8e-10A/μm and thus the leakage current of the device is found to be reduced.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; wide band gap semiconductors; DC characteristics; GaN-AlGaN; Schottky drain HEMT; Schottky source HEMT; breakdown voltage improvement; leakage current; off state break down voltage; source carrier injection; voltage -1.5 V; Gallium nitride; Gold; HEMTs; Logic gates; MODFETs; Substrates; Breakdown Voltage; Heterojunction Field Effect Transistor; High Electron Mobility Transistors; Schottky Source/Drain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Communication Systems (ICECS), 2014 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-2321-2

Type

conf

DOI

10.1109/ECS.2014.6892781

Filename

6892781