• DocumentCode
    2287950
  • Title

    SPECTRE Modeling for 45nm and Beyond

  • Author

    Chang-yong, Yin ; Bo, Hao

  • Author_Institution
    Shenyang Inst. of Eng., Shenyang
  • fYear
    2008
  • fDate
    20-22 Dec. 2008
  • Firstpage
    799
  • Lastpage
    801
  • Abstract
    As the mainstream MOS technology is scaling into 45 nm and beyond sizes, the development of physical and predictive models for circuit simulation that cover geometry, bias, temperature ,DC,AC,RF, and noise characteristics becomes a major goal. This paper addressed the emerging physical effects in 45 nm node and the new generation BSIM4 model of SPECTRE is developed for 45 nm and beyond technology nodes.
  • Keywords
    CMOS integrated circuits; circuit simulation; BSIM4 model; SPECTRE modeling; circuit simulation; mainstream MOS technology; CMOS technology; Circuit simulation; Dielectric materials; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Mathematical model; Semiconductor device modeling; Threshold voltage; BSIM4 model; degradation; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer and Electrical Engineering, 2008. ICCEE 2008. International Conference on
  • Conference_Location
    Phuket
  • Print_ISBN
    978-0-7695-3504-3
  • Type

    conf

  • DOI
    10.1109/ICCEE.2008.71
  • Filename
    4741093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2287950