Device lifetime estimation under NBTI stress considering interface trap generation

The dissociation rate of the Si-H bond at Si/SiO₂ interface under NBTI stress condition considering the quantum effect on the hole density in the inversion layer of the MOSFET is calculated. By adopting the DG method with the penetration boundary condition and the WKB approximation, the penetrated hole density profile in the gate oxide and the tendency of the amount of hole at Si-H bond according to the electric field have been shown and compared with previous studies. Using the results, we found that NBTI field dependence and the lifetime of the device under NBTI stress obey the power law dependency.