Device lifetime estimation under NBTI stress considering interface trap generation

Author

Choi, Seong Wook ; Park, Sooyoung ; Park, Young June ; Baek, Chang-ki

Author_Institution

SoEE, Seoul Nat. Univ., Seoul, South Korea

fYear

2010

fDate

17-20 Aug. 2010

Firstpage

841

Lastpage

844

Abstract

The dissociation rate of the Si-H bond at Si/SiO₂ interface under NBTI stress condition considering the quantum effect on the hole density in the inversion layer of the MOSFET is calculated. By adopting the DG method with the penetration boundary condition and the WKB approximation, the penetrated hole density profile in the gate oxide and the tendency of the amount of hole at Si-H bond according to the electric field have been shown and compared with previous studies. Using the results, we found that NBTI field dependence and the lifetime of the device under NBTI stress obey the power law dependency.

Keywords

MOSFET; dissociation; elemental semiconductors; hole density; hydrogen; silicon; silicon compounds; MOSFET; NBTI stress; NBTI stress condition; Si-H; Si-H bond; Si-SiO₂; WKB approximation; device lifetime estimation; dissociation; gate oxide; hole density profile; interface trap generation; negative bias temperature instability; power law dependency; quantum effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Conference_Location

Seoul

ISSN

1944-9399

Print_ISBN

978-1-4244-7033-4

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2010.5697944

Filename

5697944