Title :
Assessment of accuracy limitations of full band Monte Carlo device simulation
Author :
Venturi, F. ; Ghetti, A.
Author_Institution :
Dept. de Ingegneria dell´Inf., Parma Univ., Italy
Abstract :
In this paper we investigate some of the numerical approximations involved in the development of Full Band Monte Carlo (FBMC) programs for semiconductor (silicon) devices. In particular, we focus on how the accuracy in describing the Full Band silicon structure affects quantities such as the density of states (DoS), scattering rates, velocity field curves, etc.
Keywords :
Monte Carlo methods; band structure; electronic density of states; elemental semiconductors; semiconductor device models; silicon; Si; band structure; density of states; full band Monte Carlo simulation; numerical approximation; scattering rate; semiconductor device; silicon; velocity field curve; Analytical models; Conductors; Electrons; Interpolation; Monte Carlo methods; Scattering; Silicon; Substrates;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621408
