Title :
2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide
Author :
Eikyu, K. ; Sakakibara, K. ; Ishikawa, K. ; Nishimura, T.
Author_Institution :
ULSI Dev. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Two-dimensional effect of trapped electrons on device characteristics are calculated using a two-dimensional device simulator including a trap-filling current model. As the result of simulation, FN current is suppressed when the neutral trap density is over 10/sup 19/ cm/sup -3/. The results correspond to the endurance characteristics of flash memories.
Keywords :
MOSFET; electron traps; phonons; semiconductor device models; silicon compounds; tunnelling; Fowler-Nordheim current suppression; MOSFET gate oxide; SiO/sub 2/; electron trap filling; flash memory device; neutral trap density; phonon assisted tunneling model; silicon dioxide; two-dimensional simulation; Electron emission; Electron traps; Electronic mail; MOSFETs; Phonons; Probability; Silicon compounds; Tunneling; Ultra large scale integration; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621409
