DocumentCode
228892
Title
Resonant electron attachment to oxygen impurities in dense Neon gas
Author
Borghesani, A.F.
Author_Institution
Dept. of Phys. & Astron., Univ. of Padua, Padua, Italy
fYear
2014
fDate
June 29 2014-July 3 2014
Firstpage
1
Lastpage
4
Abstract
Measurements of resonant electron attachment to O2 impurities in dense Ne gas at moderately low temperature T=80 K are here reported. The density-normalized attachment frequency shows a peak at a specific density. The present data are compared to previous results obtained in dense He gas at similar temperatures. Similarly to the He case, the present data are explained by assuming that the dense environment affects the energetics of the quasi-free electrons.
Keywords
atom-molecule collisions; electron attachment; negative ions; neon; oxygen; Ne; O2; dense environment affects; dense neon gas; density normalized attachment frequency; oxygen impurities; quasifree electron energetics; resonant electron attachment; temperature 80 K; Atomic clocks; Density measurement; Energy measurement; Lead; Scattering; attaching impurities; electron attachment; electron swarms; multiple scattering; shifted energy distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Dielectric Liquids (ICDL), 2014 IEEE 18th International Conference on
Conference_Location
Bled
Type
conf
DOI
10.1109/ICDL.2014.6893070
Filename
6893070
Link To Document