DocumentCode :
228892
Title :
Resonant electron attachment to oxygen impurities in dense Neon gas
Author :
Borghesani, A.F.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Padua, Padua, Italy
fYear :
2014
fDate :
June 29 2014-July 3 2014
Firstpage :
1
Lastpage :
4
Abstract :
Measurements of resonant electron attachment to O2 impurities in dense Ne gas at moderately low temperature T=80 K are here reported. The density-normalized attachment frequency shows a peak at a specific density. The present data are compared to previous results obtained in dense He gas at similar temperatures. Similarly to the He case, the present data are explained by assuming that the dense environment affects the energetics of the quasi-free electrons.
Keywords :
atom-molecule collisions; electron attachment; negative ions; neon; oxygen; Ne; O2; dense environment affects; dense neon gas; density normalized attachment frequency; oxygen impurities; quasifree electron energetics; resonant electron attachment; temperature 80 K; Atomic clocks; Density measurement; Energy measurement; Lead; Scattering; attaching impurities; electron attachment; electron swarms; multiple scattering; shifted energy distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Dielectric Liquids (ICDL), 2014 IEEE 18th International Conference on
Conference_Location :
Bled
Type :
conf
DOI :
10.1109/ICDL.2014.6893070
Filename :
6893070
Link To Document :
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