On-chip process and temperature compensation and self-adjusting slew rate control for output buffer

Author

Kuo, Ron-Chi ; Tseng, Hsin-Yuan ; Liu, Jen-Wei ; Wang, Chua-Chin

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2011

fDate

6-7 Oct. 2011

Firstpage

37

Lastpage

40

Abstract

A novel process corner detection technique as well as process and temperature compensation method for sub-2×VDD output buffer is proposed. The threshold voltage (Vth) of PMOSs and NMOSs varying with process and temperature deviation could be detected, respectively. By adjusting output currents, the slew rate of output signal could be compensated over 117 %. The maximum data rate with compensation is 120 MHz in contrast with 95 MHz without compensation, which is measured on silicon with an equivalent probe capacitive load of 10 pF.

Keywords

MOS integrated circuits; VLSI; digital circuits; capacitance 10 pF; corner detection technique; frequency 120 MHz; frequency 95 MHz; on-chip process; output buffer; self-adjusting slew rate control; temperature compensation; Clocks; Detectors; Digital circuits; MOS devices; Process control; Semiconductor device measurement; Threshold voltage; I/O buffer; Process and temperature variation; floating N-well circuit; gate-oxide reliability; mixed-voltage-tolerant; threshold voltage detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2011 Asia Pacific Conference on Postgraduate Research in

Conference_Location

Macau

ISSN

2159-2144

Print_ISBN

978-1-4577-1608-9

Type

conf

DOI

10.1109/PrimeAsia.2011.6075065

Filename

6075065