Title :
On-chip process and temperature compensation and self-adjusting slew rate control for output buffer
Author :
Kuo, Ron-Chi ; Tseng, Hsin-Yuan ; Liu, Jen-Wei ; Wang, Chua-Chin
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
A novel process corner detection technique as well as process and temperature compensation method for sub-2×VDD output buffer is proposed. The threshold voltage (Vth) of PMOSs and NMOSs varying with process and temperature deviation could be detected, respectively. By adjusting output currents, the slew rate of output signal could be compensated over 117 %. The maximum data rate with compensation is 120 MHz in contrast with 95 MHz without compensation, which is measured on silicon with an equivalent probe capacitive load of 10 pF.
Keywords :
MOS integrated circuits; VLSI; digital circuits; capacitance 10 pF; corner detection technique; frequency 120 MHz; frequency 95 MHz; on-chip process; output buffer; self-adjusting slew rate control; temperature compensation; Clocks; Detectors; Digital circuits; MOS devices; Process control; Semiconductor device measurement; Threshold voltage; I/O buffer; Process and temperature variation; floating N-well circuit; gate-oxide reliability; mixed-voltage-tolerant; threshold voltage detection;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2011 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Macau
Print_ISBN :
978-1-4577-1608-9
DOI :
10.1109/PrimeAsia.2011.6075065
