DocumentCode
2289647
Title
Towards robust design of hybrid CMOS-SETs using feedback architectures
Author
Deng, Guoqing ; Chen, Chunhong
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
1125
Lastpage
1129
Abstract
Low temperature operation and background charge fluctuation are among critical limitations for practical single-electron-tunneling (or SET) based circuits. Particularly, background charges on the island of SET devices affect the phase of Coulomb blockade oscillation, and may eventually lead to incorrect circuit operation. In order to construct robust SET circuits, we explore new design methods based on feedback architectures and novel characteristics of SET devices. We first discuss the impact of a direct feedback on circuit performance against background charges. Then, we propose a self-adapted input-referred feedback structure which can drastically reduce the sensitivity of circuit behaviors to background charge fluctuations. An improved hybrid CMOS-SET ADC circuit is also presented as an example to take advantage of the proposed feedback architecture for robustness against random background charges.
Keywords
CMOS integrated circuits; Coulomb blockade; analogue-digital conversion; feedback; integrated circuit design; single electron devices; tunnelling; Coulomb blockade oscillation; charge fluctuation; feedback architectures; hybrid CMOS-SET; low temperature operation; self-adapted input-referred feedback structure; single-electron-tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5698032
Filename
5698032
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