DocumentCode :
2290198
Title :
Compact ZnO nanorods composed film by re-growth of ZnO nanorods and Ar plasma treatment
Author :
Wu, Wen-Hau ; Chao, Cha-Hsin ; Hung, Shih-Che ; Lin, Ching-Fuh
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2010
fDate :
17-20 Aug. 2010
Firstpage :
525
Lastpage :
528
Abstract :
Compact, film-like ZnO nanorods were fabricated by re-growth of ZnO nanorods on base ZnO nanorods using a simple low-temperature hydrothermal technique. The Ar plasma treatment was employed to blur the boundaries of re-grown ZnO nanorods. The morphology, crystalline and electrical properties of both re-grown and Ar plasma treated re-grown ZnO nanorods were studied by SEM, AFM, XRD, and four point probe measurement. The SEM images and AFM analysis revealed the increasing diameter and compact arrangement of re-grown ZnO nanorods. The XRD analysis showed highly uniform orientation. The resistivity of re-grown ZnO nanorods composed film is 3.906Ω*cm while resistivity of re-grown ZnO nanorods composed film with Ar plasma treatment is 2.231Ω*cm which indicates that the Ar plasma treatment blurred the boundaries therefore decreasing the resistivity. The optical transmittance of as-grown and re-grown ZnO nanorods in the visible range was higher than 80%.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; electrical resistivity; liquid phase deposition; nanofabrication; nanorods; plasma materials processing; scanning electron microscopy; semiconductor growth; semiconductor thin films; transparency; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; AFM; Ar plasma treatment; SEM; UV-visible spectrometer; XRD; ZnO; compact nanorods; crystalline properties; electrical resistivity; film-like nanorods; four point probe measurement; low-temperature hydrothermal technique; optical transmittance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
ISSN :
1944-9399
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2010.5698061
Filename :
5698061
Link To Document :
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