Title :
A voltage-controlled oscillator for a 300 MHz high-temperature transceiver realized in 0.5 μm SOS technology
Author :
Moor, A.P. ; Rochelle, J.M. ; Britton, C.L. ; Moore, J.A. ; Emery, M.S. ; Schultz, R.L.
Author_Institution :
Tennessee Univ., Knoxville, TN, USA
Abstract :
This paper presents a study of the design of a 300-MHz voltage-controlled oscillator (VCO) implemented in a 0.5-μm Silicon-On-Sapphire (SOS) CMOS technology. The circuit is designed for use in a frequency synthesizer in a high-temperature (200°C) transceiver. Several issues relating to high-temperature applications as well as the overall system architecture are presented. The design of the VCO is emphasized in this paper, but a programmable divider, phase detector/charge pump and loop filter were also designed for use in closed-loop tests of the VCO and are briefly discussed. Prototyping and testing procedures are discussed and the results of the prototyped circuits are evaluated
Keywords :
CMOS analogue integrated circuits; VHF oscillators; circuit tuning; frequency synthesizers; high-temperature electronics; integrated circuit design; integrated circuit noise; phase noise; sapphire; silicon-on-insulator; transceivers; voltage-controlled oscillators; 0.5 micron; 25 to 200 C; 300 MHz; CMOS VCO; SOS CMOS technology; Si-Al2O3; VCO closed-loop tests; charge pump; frequency synthesizer; high-temperature transceiver; loop filter; phase detector; phase-noise; programmable divider; system architecture; tuning range; voltage-controlled oscillator; CMOS technology; Charge pumps; Circuit testing; Detectors; Filters; Frequency synthesizers; Phase detection; Prototypes; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-7150-X
DOI :
10.1109/MWSCAS.2001.986266
