Quantitative analysis of microwave frequency multiplication in MESFET/HEMT devices

Author

Johnson, J. ; Chee, M. ; Branner, G.R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

760

Abstract

This paper provides an in-depth analysis of the principles of harmonic frequency generation utilizing microwave MESFET/HEMT transistor models. The technique employs an in-depth computer oriented and quantitative analysis. The effects of bias, drive voltage, and load on the harmonic output of an ideal transistor model are explored

Keywords

Schottky gate field effect transistors; electronic engineering computing; frequency multipliers; harmonic generation; high electron mobility transistors; microwave field effect transistors; microwave frequency convertors; semiconductor device models; HEMT devices; MESFET devices; bias effects; computer oriented analysis; drive voltage effects; harmonic frequency generation; harmonic output; ideal transistor model; load effects; microwave HEMT models; microwave MESFET models; microwave frequency multiplication; quantitative analysis; Circuit analysis; Electronic mail; Frequency conversion; HEMTs; Harmonic analysis; Intrusion detection; MESFETs; Microwave devices; PHEMTs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on

Conference_Location

Dayton, OH

Print_ISBN

0-7803-7150-X

Type

conf

DOI

10.1109/MWSCAS.2001.986298

Filename

986298