Title :
Effects of active microwave device parameters on microwave harmonic frequency generators
Author :
Johnson, J. ; Branner, G.R. ; Chee, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
Modern microwave and RF systems are increasingly utilizing internal frequency upconversion techniques. This paper develops improved methods of designing active microwave frequency multipliers utilizing MESFET and HEMT devices. The methods extend and improve the accuracy of classical techniques developed over the past few years
Keywords :
Schottky gate field effect transistors; frequency multipliers; high electron mobility transistors; microwave field effect transistors; microwave frequency convertors; HEMT devices; MESFET devices; RF systems; active microwave device parameters; active microwave frequency multipliers; internal frequency upconversion techniques; microwave harmonic frequency generators; microwave systems; Diodes; Frequency conversion; HEMTs; Intrusion detection; MESFETs; Microwave devices; Microwave generation; Modems; Production; Radio frequency;
Conference_Titel :
Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-7150-X
DOI :
10.1109/MWSCAS.2001.986302
