DocumentCode
2290837
Title
Effects of active microwave device parameters on microwave harmonic frequency generators
Author
Johnson, J. ; Branner, G.R. ; Chee, M.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Volume
2
fYear
2001
fDate
2001
Firstpage
777
Abstract
Modern microwave and RF systems are increasingly utilizing internal frequency upconversion techniques. This paper develops improved methods of designing active microwave frequency multipliers utilizing MESFET and HEMT devices. The methods extend and improve the accuracy of classical techniques developed over the past few years
Keywords
Schottky gate field effect transistors; frequency multipliers; high electron mobility transistors; microwave field effect transistors; microwave frequency convertors; HEMT devices; MESFET devices; RF systems; active microwave device parameters; active microwave frequency multipliers; internal frequency upconversion techniques; microwave harmonic frequency generators; microwave systems; Diodes; Frequency conversion; HEMTs; Intrusion detection; MESFETs; Microwave devices; Microwave generation; Modems; Production; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on
Conference_Location
Dayton, OH
Print_ISBN
0-7803-7150-X
Type
conf
DOI
10.1109/MWSCAS.2001.986302
Filename
986302
Link To Document