InP double heterojunction bipolar transistor linear-efficient power amplifiers

Author

Kehias, L. ; Calcatera, M. ; Jenkins, T. ; Quach, T. ; Watson, Paul ; Welch, Richard ; Worley, Rick

Author_Institution

AFRL/SNDM, Wright-Patterson AFB, OH

Volume

2

fYear

2001

fDate

2001

Firstpage

781

Abstract

Excellent linear efficiency has been demonstrated with InP double heterojunction bipolar transistors (DHBTs) being developed for military and commercial applications under an Air Force Dual-Use Science and Technology (AF DUS and T) program. The 1.95 GHz to 28 GHz operating frequencies address applications from commercial wireless communication up through Local Multipoint Distribution Services systems. Excellent carrier to third-order intermodulation (C/IM3) ratios have also been measured simultaneously with high power-added efficiency (PAE) on InP DHBT circuits. This linear-efficient performance is due, in part, to the InP DHBT´s improved breakdown voltage, improved cut-off frequency and the reduced offset voltage resulting from the double heterojunction and InP collector

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; intermodulation; microwave power amplifiers; semiconductor device breakdown; 1.95 to 28 GHz; InP; InP double heterojunction bipolar transistor; Local Multipoint Distribution Services; breakdown voltage; carrier to third-order intermodulation ratio; cut-off frequency; linear efficiency; microwave power amplifier; offset voltage; power-added efficiency; wireless communication; DH-HEMTs; Double heterojunction bipolar transistors; Gallium arsenide; Indium phosphide; Intermodulation distortion; Linearity; Microwave amplifiers; Power amplifiers; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on

Conference_Location

Dayton, OH

Print_ISBN

0-7803-7150-X

Type

conf

DOI

10.1109/MWSCAS.2001.986303

Filename

986303