DocumentCode :
2290885
Title :
Superior ‹110›-directed mobility to ‹100›-directed mobility in ultrathin body (110) nMOSFETs
Author :
Shimizu, Ken ; Saraya, Takuya ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
2
Abstract :
The paper demonstrates the mue anisotropy in (110) ultra-thin body nFETs for the first time. It is found that lang110rang mue is higher than lang100rang mue in an ultimately thin SOI nFETs, though lang110rang mue is smaller than lang100rang mue in bulk or relatively thick silicon-on-insulator (SOI). Result reveals that this is opposite to (110) bulk nFETs, which is important in understanding the physics behind the carrier transport in (110) nFETs and in the selection of the proper channel direction in an ultimately scaled-down device structure.
Keywords :
MOSFET; carrier mobility; silicon-on-insulator; (110) ultrathin body nFET; Si; carrier transport; channel direction; lang100rang-directed mobility; mue anisotropy; scaled-down device structure; superior lang110rang-directed mobility; thick silicon-on-insulator; ultrathin body (110) nMOSFET; Anisotropic magnetoresistance; Electron mobility; Ellipsoids; FETs; FinFETs; MOSFETs; Physics; Potential well; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318732
Filename :
5318732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2290885
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