Title :
A-RAM: Novel capacitor-less DRAM memory
Author :
Rodriguez, Noel ; Cristoloveanu, Sorin ; Gamiz, Francisco
Author_Institution :
Dept. of Electron., Univ. of Granada, Granada, Spain
Abstract :
A totally different capacitor-less, single-transistor memory cell (1T-DRAM) is proposed and documented. Its novelty comes from the body partitioning in two distinct regions, where electrons and holes are respectively confined. As compared to earlier 1T-DRAMs, the coexistence and coupling of electrons and holes is maintained even in ultrathin fully depleted MOSFETs. Selected simulations demonstrate attractive performance and great potential for embedded memory applications.
Keywords :
DRAM chips; embedded systems; integrated circuit design; silicon-on-insulator; A-RAM design; Si-SiO2; capacitor-less DRAM memory; embedded memory; single-transistor memory cell; ultrathin SOI technology; ultrathin fully depleted MOSFET; Body regions; Capacitors; Charge carrier processes; Electrons; Impact ionization; MOSFETs; Memory architecture; Random access memory; Scalability; Threshold voltage;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318734
