• DocumentCode
    2290922
  • Title

    A-RAM: Novel capacitor-less DRAM memory

  • Author

    Rodriguez, Noel ; Cristoloveanu, Sorin ; Gamiz, Francisco

  • Author_Institution
    Dept. of Electron., Univ. of Granada, Granada, Spain
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A totally different capacitor-less, single-transistor memory cell (1T-DRAM) is proposed and documented. Its novelty comes from the body partitioning in two distinct regions, where electrons and holes are respectively confined. As compared to earlier 1T-DRAMs, the coexistence and coupling of electrons and holes is maintained even in ultrathin fully depleted MOSFETs. Selected simulations demonstrate attractive performance and great potential for embedded memory applications.
  • Keywords
    DRAM chips; embedded systems; integrated circuit design; silicon-on-insulator; A-RAM design; Si-SiO2; capacitor-less DRAM memory; embedded memory; single-transistor memory cell; ultrathin SOI technology; ultrathin fully depleted MOSFET; Body regions; Capacitors; Charge carrier processes; Electrons; Impact ionization; MOSFETs; Memory architecture; Random access memory; Scalability; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318734
  • Filename
    5318734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2290922