Title :
First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates
Author :
Mazellier, J.-P. ; Widiez, J. ; Andrieu, F. ; Lions, M. ; Saada, S. ; Hasegawa, M. ; Tsugawa, K. ; Brevard, L. ; Dechamp, J. ; Rabarot, M. ; Delaye, V. ; Cristoloveanu, S. ; Clavelier, L. ; Deleonibus, S. ; Bergonzo, P. ; Faynot, O.
Author_Institution :
CEA-LETI, MINATEC, Grenoble, France
Abstract :
We have fabricated Silicon-On-Diamond (SOD) substrates on which, for the first time, we integrated n and p Fully Depleted MOSFETs high-K/metal gate down to 200 nm gate length. The devices show excellent electrical characteristics and a 57% improvement of the thermal resistance compared to the co-processed one on standard SOI.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; silicon; CMOS technology; MOSFET; Si; heat dissipation; silicon-on-diamond substrates; thermal resistance; Bonding; CMOS technology; High K dielectric materials; High-K gate dielectrics; Hydrogen; MOSFETs; Plasma temperature; Silicon on insulator technology; Thermal management; Thermal resistance;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318735
