DocumentCode :
2290991
Title :
SOI gated resistor: CMOS without junctions
Author :
Colinge, J.P. ; Lee, C.-W. ; Afzalian, A. ; Dehdashti, N. ; Yan, R. ; Ferain, I. ; Razavi, P. ; O´Neill, B. ; Blake, A. ; White, M. ; Kelleher, A.M. ; McCarthy, B. ; Murphy, R.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
2
Abstract :
We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.
Keywords :
MOSFET; elemental semiconductors; resistors; silicon; silicon-on-insulator; SOI gated resistor; Si-SiO2; junctionless SOI MOSFET; metal-oxide-semiconductor field effect transistor; silicon-on-insulator; Doping; FETs; Fabrication; Implants; MOSFETs; Nanoscale devices; Nanowires; Resistors; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318737
Filename :
5318737
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2290991
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