Title :
Variable-barrier tunneling SOI transistor (VBT)
Author :
Afzalian, A. ; Dehdashti, N. ; Ferain, I. ; Lee, C.-W. ; Yan, R. ; Razavi, P. ; Colinge, J.P.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300 K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300 K. The VBT reported here breaks the 60 mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.
Keywords :
Green´s function methods; conduction bands; contact potential; electric current; elemental semiconductors; nanoelectronics; nanowires; semiconductor device models; semiconductor quantum wires; silicon; silicon-on-insulator; tunnel transistors; tunnelling; SOI nanowire transistor; Si-SiO2; conduction band; gate voltage; intraband tunneling; self-consistent 3D nonequilibrium Green function quantum simulator; silicon-on-insulator; subthreshold current; subthreshold slope; temperature 300 K; variable-barrier tunneling SOI transistor; Cities and towns; Educational institutions; Electrons; Energy barrier; Impact ionization; MOSFETs; Nanoscale devices; Shape; Tunneling; Voltage;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318739
