Variable-barrier tunneling SOI transistor (VBT)

Author

Afzalian, A. ; Dehdashti, N. ; Ferain, I. ; Lee, C.-W. ; Yan, R. ; Razavi, P. ; Colinge, J.P.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300 K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300 K. The VBT reported here breaks the 60 mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.

Keywords

Green´s function methods; conduction bands; contact potential; electric current; elemental semiconductors; nanoelectronics; nanowires; semiconductor device models; semiconductor quantum wires; silicon; silicon-on-insulator; tunnel transistors; tunnelling; SOI nanowire transistor; Si-SiO₂; conduction band; gate voltage; intraband tunneling; self-consistent 3D nonequilibrium Green function quantum simulator; silicon-on-insulator; subthreshold current; subthreshold slope; temperature 300 K; variable-barrier tunneling SOI transistor; Cities and towns; Educational institutions; Electrons; Energy barrier; Impact ionization; MOSFETs; Nanoscale devices; Shape; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318739

Filename

5318739