Title :
The SiGe heterojunction source PNPN n-MOSFET with SSOI for low power application
Author :
Chang, Hsu-Yu ; Venkatagirish, N. ; Tura, Ahmet ; Jhaveri, Ritesh ; Woo, Jason
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
A novel device concept, SiGe tunnel source(PNPN) based on the principle of band to band tunneling is reported in this paper. The SiGe source PNPN tunneling FET shows steep sub-threshold swing and higher turn on current than SiGe source PIN tunnel FET. For achieving high turn on current, the SSOI is also investigated in SiGe tunnel source device.
Keywords :
Ge-Si alloys; MOSFET; semiconductor heterojunctions; semiconductor materials; tunnel transistors; PIN tunnel FET; PNPN n-MOSFET; Si-Ge; SiGe heterojunction; band to band tunneling; Doping profiles; FETs; Gate leakage; Germanium silicon alloys; Heterojunctions; MOSFET circuits; Parasitic capacitance; Photonic band gap; Silicon germanium; Tunneling;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318740
