Platinum silicide metallic source & drain process optimization for FDSOI pMOSFETs

We report on the development of a metallic source and drain module for FDSOI pMOSFETs including lateral PtSi formation, Ti/TiN barrier, optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the PtSi surface prior to barrier deposition. Mean specific contact resistivity values lower than 2 Omega mum² have been achieved, which leads to highly performant pMOSFET devices (I_on = 345 muA.mum^{- 1}/I_off = 30 nA.mum^-1 at -1V for 50 nm gate length).