Expanding opportunities of Ultra Low Power and harsh applications with Fully Depleted (FD) SOI (invited)

Author

Ida, J. ; Tani, K. ; Ohono, M. ; Yanagihara, M. ; Igarashi, Y. ; Sakamoto, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Kanazawa Inst. of Technol., Nonoichi, Japan

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

3

Abstract

Ultra low power (ULP) applications are expected to be the next huge market of Si LSI. Fully depleted (FD)-SOI is the suitable device for ULP applications. In this article, the expected power level of new ULP applications is reviewed and the device characteristic of FD-SOI focusing on ULP design is summarized. It is highlighted again the necessity of collaboration between design and device is the key in order to expand the new ULP applications with FD-SOI. And our activity on harsh applications is also shown.

Keywords

large scale integration; low-power electronics; reviews; silicon-on-insulator; FD-SOI; Si; Si LSI; ULP applications; ULP design; fully depleted SOI; harsh applications; review; ultralow power electronics; Batteries; Collaboration; Consumer electronics; Educational institutions; Electronics industry; Industrial electronics; Medical services; Nanoelectronics; Power engineering and energy; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318749

Filename

5318749