DocumentCode :
2291232
Title :
Expanding opportunities of Ultra Low Power and harsh applications with Fully Depleted (FD) SOI (invited)
Author :
Ida, J. ; Tani, K. ; Ohono, M. ; Yanagihara, M. ; Igarashi, Y. ; Sakamoto, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kanazawa Inst. of Technol., Nonoichi, Japan
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
3
Abstract :
Ultra low power (ULP) applications are expected to be the next huge market of Si LSI. Fully depleted (FD)-SOI is the suitable device for ULP applications. In this article, the expected power level of new ULP applications is reviewed and the device characteristic of FD-SOI focusing on ULP design is summarized. It is highlighted again the necessity of collaboration between design and device is the key in order to expand the new ULP applications with FD-SOI. And our activity on harsh applications is also shown.
Keywords :
large scale integration; low-power electronics; reviews; silicon-on-insulator; FD-SOI; Si; Si LSI; ULP applications; ULP design; fully depleted SOI; harsh applications; review; ultralow power electronics; Batteries; Collaboration; Consumer electronics; Educational institutions; Electronics industry; Industrial electronics; Medical services; Nanoelectronics; Power engineering and energy; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318749
Filename :
5318749
Link To Document :
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