Title :
Results on aligned SiO2/SiO2 direct wafer-to-wafer low temperature bonding for 3D integration
Author :
Garnier, A. ; Angermayer, M. ; Di Cioccio, L. ; Gueguen, P. ; Wagenleitner, T.
Author_Institution :
CEA Leti, Grenoble, France
Abstract :
To meet future 3D stacking requirements on wafer-to-wafer level, we successfully demonstrate oxide-oxide direct bonding on 200 mm with and without copper level utilizing face-to-face alignment and bonding within one process module as well as on the same chuck.
Keywords :
copper; silicon compounds; wafer bonding; wafer-scale integration; 3D integration; 3D stacking; Cu; SiO2-SiO2; aligned direct wafer-wafer low temperature bonding; copper level; one process module; oxide-oxide direct bonding; size 200 mm; wafer alignement; Annealing; Cleaning; Copper; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Silicon; Stacking; Wafer bonding;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318753
