DocumentCode :
2291318
Title :
Three Dimensional integration - memory applications
Author :
Iyer, S.S.
Author_Institution :
Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
5
Abstract :
3D integration of memory for both memory and processor caches provide a fertile application space for 3D integration. A simple 2 strata stack can reduce individual die size by approximately half, improving chip yield. Multi chip memory stacks can ease packaging and can significantly reduce power for main memory. Such stacks are easily testable and repairable through redundancy. The design of such 3D stacks is critically dependent on the TSV technology used and is expected to become more attractive as TSV diameters and TSV overhead reduce.
Keywords :
cache storage; integrated circuit packaging; logic design; storage management chips; 3D integration; TSV technology; memory applications; multichip memory stacks; power reduction; processor caches; strata stack; three dimensional integration; through silicon vias; Integrated circuit interconnections; Laminates; Packaging; Power supplies; Productivity; Prototypes; Random access memory; Silicon; Space technology; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318755
Filename :
5318755
Link To Document :
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