Title :
Channel engineering of SOI MOSFETs for RF applications
Author :
Chen, C.L. ; Knecht, J.M. ; Kedzierski, J. ; Chen, C.K. ; Gouker, P.M. ; Yost, D.-R. ; Healey, P. ; Wyatt, P.W. ; Keast, C.L.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.
Keywords :
CMOS integrated circuits; MOSFET; ion implantation; silicon-on-insulator; SOI MOSFET; breakdown voltage; ion implantation; transconductance; CMOS logic circuits; CMOS process; Doping; FETs; Immune system; Implants; Logic devices; MOSFETs; Radio frequency; Transconductance;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318756
