Title :
Multiple independent gate FET ring oscillators with dynamic frequency tuning
Author :
Wilson, Dale G. ; Meek, Brian N. ; DeGregorio, Kelly J. ; Hackler, Douglas R.
Author_Institution :
American Semicond., Inc., Boise, ID, USA
Abstract :
Fully depleted SOI multiple independent gate FETs (MIGFETs) provide dynamic control of threshold voltage (Vt). This dynamic Vt capability is applied to ring oscillators for frequency tuning and compensation of voltage variation. The MIGFET ring oscillators were manufactured in an 180 nm SOI process that supports both traditional double gate transistors and MIGFETs.
Keywords :
field effect transistors; silicon-on-insulator; MIGFET ring oscillators; dynamic Vt capability; dynamic frequency tuning; frequency tuning; gate FET ring oscillators; Circuit optimization; FETs; Frequency; Inverters; MOS devices; Manufacturing processes; Ring oscillators; Threshold voltage; Tuning; Voltage-controlled oscillators;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318761
